Micron
MTA9ADF1G72PZ-3G2E1 Micron 8GB DDR4-3200MHz PC4-25600 Registered ECC CL22 288-Pin DIMM 1.2V Very Low Profile Single Rank Memory
MTA9ADF1G72PZ-3G2E1 Micron 8GB DDR4-3200MHz PC4-25600 Registered ECC CL22 288-Pin DIMM 1.2V Very Low Profile Single Rank Memory
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The Micron MTA9ADF1G72PZ-3G2E1 8GB DDR4-3200MHz PC4-25600 Registered ECC CL22 288-Pin DIMM 1.2V Very Low Profile Single Rank Memory is a high-performance memory solution designed for demanding enterprise applications. With a capacity of 8GB, this registered ECC (Error-Correcting Code) module is engineered to provide exceptional reliability and data integrity in mission-critical environments.
This DDR4 memory module operates at a speed of 3200MHz, making it an ideal choice for applications that require high-bandwidth memory access. The PC4-25600 rating indicates its compatibility with systems that support DDR4-3200MHz memory speeds. The CL22 latency rating ensures that this memory module can handle high-speed data transfer and processing requirements.
The 288-pin DIMM (Dual In-Line Memory Module) form factor of this memory module allows for easy installation in a wide range of server and workstation systems. The 1.2V voltage rating ensures compatibility with systems that operate at this voltage level. The very low profile design of this memory module makes it an excellent choice for systems with limited clearance or space constraints.
The single rank design of this memory module provides a high level of scalability and flexibility, making it an ideal choice for applications that require large amounts of memory. The registered ECC feature ensures that this memory module can detect and correct single-bit errors, providing an additional layer of data integrity and reliability.
Whether you're looking to upgrade your existing server or workstation system or build a new one from scratch, the Micron MTA9ADF1G72PZ-3G2E1 8GB DDR4-3200MHz PC4-25600 Registered ECC CL22 288-Pin DIMM 1.2V Very Low Profile Single Rank Memory is an excellent choice for demanding applications that require high-performance memory.
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