MTA18ASF2G72AZ-2G6D1 Micron 16GB DDR4-2666MHz PC4-21300 ECC Unbuffered CL19 288-Pin DIMM 1.2V Dual Rank Memory

The MTA18ASF2G72AZ-2G6D1 Micron 16GB DDR4-2666MHz PC4-21300 ECC Unbuffered CL19 288-Pin DIMM 1.2V Dual Rank Memory is a high-performance, enterprise-grade memory solution designed to meet the demands of data-intensive applications. With a capacity of 16GB, this dual rank DIMM provides ample memory for multitasking, data processing, and other resource-intensive tasks.

This Micron memory module operates at a speed of 2666MHz, which is significantly faster than standard DDR4 memory. The PC4-21300 rating indicates its compatibility with systems that support DDR4-2666MHz memory. The ECC (Error-Correcting Code) feature ensures that data integrity is maintained by detecting and correcting single-bit errors, making it an ideal choice for mission-critical applications.

The unbuffered design of this memory module allows for optimal performance in systems that support it. With a CAS latency of 19, this memory module provides fast data access and retrieval, making it suitable for applications that require rapid data processing. The 288-pin design ensures compatibility with systems that use this type of DIMM, while the 1.2V voltage rating ensures safe and reliable operation.

The MTA18ASF2G72AZ-2G6D1 Micron 16GB DDR4-2666MHz PC4-21300 ECC Unbuffered CL19 288-Pin DIMM 1.2V Dual Rank Memory is an excellent choice for businesses and organizations that require high-performance memory solutions for their data centers, servers, and other critical systems. Its high capacity, fast speed, and ECC feature make it an ideal solution for applications that demand reliability, performance, and data integrity.