Micron
MTA18ASF1G72PDZ-2G6 Micron 8GB DDR4-2666MHz PC4-21300 Reg ECC CL19 288Pin RDIMM 1.2V Dual Rank Memory
MTA18ASF1G72PDZ-2G6 Micron 8GB DDR4-2666MHz PC4-21300 Reg ECC CL19 288Pin RDIMM 1.2V Dual Rank Memory
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The MTA18ASF1G72PDZ-2G6 Micron 8GB DDR4-2666MHz PC4-21300 Reg ECC CL19 288Pin RDIMM 1.2V Dual Rank Memory is a high-performance, enterprise-grade memory solution designed to meet the demands of data-intensive applications. With its 8GB capacity, this dual rank RDIMM (Registered Dual In-Line Memory Module) is engineered to provide reliable and efficient memory access for servers and workstations.
This Micron memory module operates at a speed of 2666MHz, making it an ideal choice for applications that require fast data transfer rates. The PC4-21300 specification indicates its compatibility with systems that support DDR4-2666MHz memory. The Registered ECC (Error-Correcting Code) feature ensures that data integrity is maintained by detecting and correcting single-bit errors, providing an additional layer of protection against data corruption.
The MTA18ASF1G72PDZ-2G6 memory module is designed to operate at a voltage of 1.2V, making it compatible with systems that support this voltage level. Its 288-pin design and dual rank configuration enable it to provide high-density memory access, making it an excellent choice for applications that require large amounts of memory. With its CL19 latency, this memory module provides a balance between speed and latency, ensuring that data access is both fast and efficient.
This Micron memory module is designed to meet the needs of enterprise environments, where reliability and performance are critical. Its high-quality construction and rigorous testing ensure that it can withstand the demands of 24/7 operation, making it an excellent choice for servers, workstations, and other data-intensive applications.
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