MTA18ASF1G72HZ-2G6B1 Micron 8GB PC4-21300 ECC Unbuffered DDR4-2666MHz CL19 260-Pin SODIMM Dual Rank Memory

Upgrade your system's performance with the MTA18ASF1G72HZ-2G6B1 Micron 8GB PC4-21300 ECC Unbuffered DDR4-2666MHz CL19 260-Pin SODIMM Dual Rank Memory. This high-quality RAM module is designed to deliver exceptional speed and reliability, making it an ideal choice for enterprise IT and computer hardware applications.

The MTA18ASF1G72HZ-2G6B1 features a robust 8GB capacity, ensuring that your system has ample memory to handle demanding workloads and multitasking. With a blazing-fast speed of DDR4-2666MHz, this module enables your system to transfer data quickly and efficiently, reducing lag and improving overall performance. The PC4-21300 rating guarantees compatibility with systems that support high-speed memory.

This ECC Unbuffered memory module provides an additional layer of data protection, detecting and correcting errors in real-time to prevent data corruption and system crashes. The 260-Pin SODIMM form factor ensures easy installation, while the dual-rank design enables improved memory density and flexibility. With a CAS latency of CL19, this module delivers responsive performance and low latency.

Built with Micron's renowned expertise and high-quality components, the MTA18ASF1G72HZ-2G6B1 is engineered to deliver exceptional reliability and durability. Whether you're upgrading your existing system or building a new one, this 8GB DDR4 memory module is an excellent choice for ensuring optimal performance, stability, and data integrity.