MT18JSF51272AZ-1G1AZES Micron Technology 8GB PC3-10600 non-ECC Unbuffered DDR3-1333MHz CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory

Experience the reliability and performance of Micron Technology's MT18JSF51272AZ-1G1AZES 8GB DDR3 RAM module, designed to meet the demands of your high-performance computing needs. This 8GB PC3-10600 non-ECC Unbuffered DDR3-1333MHz CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory module is engineered to deliver exceptional speed and efficiency, making it an ideal choice for a wide range of applications.

With a capacity of 8GB, this module provides ample memory for multitasking, data-intensive applications, and resource-hungry software. The PC3-10600 specification ensures compatibility with systems that require high-speed memory, while the non-ECC (Error-Correcting Code) design makes it suitable for applications where data integrity is not a primary concern. The Unbuffered design allows for easy installation and removal, while the 240-pin DIMM format ensures a secure connection to your system's motherboard.

The MT18JSF51272AZ-1G1AZES module operates at a speed of 1333MHz, with a CAS latency of 9 (CL9) for fast data access and retrieval. The 1.35V low voltage design helps reduce power consumption and heat generation, making it an energy-efficient choice for your system. With its dual rank design, this module can handle demanding workloads and provide a seamless computing experience.

Whether you're a professional looking to upgrade your workstation or a business seeking to enhance your server's performance, the Micron Technology MT18JSF51272AZ-1G1AZES 8GB DDR3 RAM module is an excellent choice. Its high-speed performance, reliability, and energy efficiency make it an ideal solution for a wide range of applications, from data centers to high-performance computing environments.