MT16KTF1G64HZ-1G6N1 Micron Technology 8GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory

The MT16KTF1G64HZ-1G6N1 is a leading-edge memory solution developed by Micron Technology, specifically designed for high-performance computing applications. This versatile 8GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 memory module provides optimal performance for ultrafast data processing and enhanced system responsiveness.

With its cutting-edge 204-pin SO-DIMM format tailored to fit various laptop models, the MT16KTF1G64HZ-1G6N1 offers exceptional compatibility and plug-and-play convenience. Its reduced power demands, realized through a low voltage specification of 1.35V, contribute to improved system efficiency and extended battery life.

One notable feature of the MT16KTF1G64HZ-1G6N1 is its dual-rank architecture, allowing for increased data throughput and improved memory bandwidth, particularly useful for demanding multimedia and workstation environments. The use of DDR3 technology ensures optimal performance for tasks demanding high amounts of memory bandwidth, including video editing, 3D rendering, and complex data processing operations.

Equipt with Micron's leading-edge manufacturing process and rigorous quality assurance, the MT16KTF1G64HZ-1G6N1