MT16JTF1G64HZ-1G6E1 Micron 8GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM Dual Rank Memory

The MT16JTF1G64HZ-1G6E1 Micron 8GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM Dual Rank Memory is a high-performance memory module designed to meet the demands of modern computing systems. With a capacity of 8GB, this SODIMM (Small Outline Dual In-Line Memory Module) is ideal for upgrading laptops, desktops, and other small form factor systems that utilize DDR3 memory.

This Micron memory module operates at a speed of 1600MHz, which is significantly faster than the standard 1333MHz speed of many DDR3 systems. The CL11 latency rating indicates that this memory module can handle complex data transfer operations with minimal delay, making it suitable for applications that require high-speed data processing.

The non-ECC (Error-Correcting Code) and unbuffered design of this memory module make it an excellent choice for systems that do not require error correction or registered memory. The 204-pin SODIMM form factor ensures compatibility with a wide range of systems, including laptops and small form factor desktops.

The dual rank design of this memory module allows for increased bandwidth and improved system performance, making it an excellent choice for applications that require high-speed data transfer. With its high-speed operation, low latency, and compact SODIMM form factor, the MT16JTF1G64HZ-1G6E1 Micron 8GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM Dual Rank Memory is an excellent upgrade option for systems that require a boost in performance and capacity.