M474B1G73QH0-YK0 Samsung 8GB PC3-12800 ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory

Upgrade your laptop's performance with the Samsung M474B1G73QH0-YK0 8GB PC3-12800 ECC Unbuffered DDR3-1600MHz memory module. This 204-pin SODIMM is designed to deliver reliable, high-speed performance for demanding applications. With a speed of 1600MHz and a CAS latency of 11, this DDR3 memory module ensures smooth and efficient data transfer.

The Samsung M474B1G73QH0-YK0 memory module features a low voltage of 1.35V, which not only reduces power consumption but also helps to minimize heat generation. Its dual-rank design allows for increased memory density, making it an ideal choice for laptops that require high-capacity memory. Additionally, this ECC (Error-Correcting Code) memory module provides an extra layer of data protection, detecting and correcting data errors in real-time to ensure data integrity and system stability.

As an unbuffered memory module, the Samsung M474B1G73QH0-YK0 provides a direct connection between the memory module and the system's memory controller, resulting in lower latency and improved performance. With its 8GB capacity, this memory module provides ample memory for multitasking, running memory-intensive applications, and handling large datasets. Whether you're a business user, gamer, or content creator, the Samsung M474B1G73QH0-YK0 memory module is the perfect solution to boost your laptop's performance and productivity.