M474B1G73BH0YH9 Samsung 8GB PC3-10600 ECC Unbuffered DDR3-1333MHz CL9 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory

The Samsung M474B1G73BH0YH9 is a high-performance 8GB DDR3 memory module designed to meet the demands of enterprise IT and computer hardware applications. With its PC3-10600 speed rating, this ECC unbuffered SODIMM memory module operates at a frequency of 1333MHz, providing a reliable and efficient solution for data-intensive workloads.

This 204-pin SODIMM memory module is built with a low voltage of 1.35V, making it suitable for a wide range of systems that require reduced power consumption. The dual rank design of the M474B1G73BH0YH9 allows for increased memory capacity and improved system performance, making it an ideal choice for applications that require high-speed data transfer and processing.

The CL9 latency rating of the Samsung M474B1G73BH0YH9 indicates a moderate latency, which is well-suited for most enterprise IT and computer hardware applications. This memory module is designed to provide a balance between speed and latency, making it a reliable and efficient solution for a wide range of systems.

The Samsung M474B1G73BH0YH9 is a high-quality memory module that is designed to meet the demands of enterprise IT and computer hardware applications. With its high-speed performance, low voltage, and dual rank design, this memory module is an ideal choice for systems that require high-speed data transfer and processing.