Samsung
M474B1G73BH0-YH9 Samsung 8GB PC3-10600 ECC Unbuffered DDR3-1333MHz CL9 240-Pin DIMM 1.35V Low Voltage Memory
M474B1G73BH0-YH9 Samsung 8GB PC3-10600 ECC Unbuffered DDR3-1333MHz CL9 240-Pin DIMM 1.35V Low Voltage Memory
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The Samsung M474B1G73BH0-YH9 is a high-performance server memory module designed to enhance the capabilities of your data center or enterprise server. This 8GB PC3-10600 ECC Unbuffered DDR3-1333MHz memory module operates at a speed of 1333MHz, ensuring rapid data transfer and efficient system performance. With a low voltage of 1.35V, this module not only reduces power consumption but also contributes to a more energy-efficient data center environment.
Featuring a 240-pin DIMM design, this Samsung memory module is engineered for seamless compatibility and easy installation. The ECC (Error-Correcting Code) functionality provides an additional layer of data integrity, automatically detecting and correcting single-bit errors to prevent data corruption and system crashes. The CL9 latency rating indicates a responsive memory performance, minimizing delays and ensuring smooth system operations.
The Samsung M474B1G73BH0-YH9 memory module is a reliable and cost-effective solution for businesses seeking to upgrade their server's memory capacity and performance. By leveraging Samsung's expertise in memory technology and adhering to rigorous quality standards, this module delivers exceptional stability and performance, making it an ideal choice for organizations looking to optimize their server infrastructure and improve overall system efficiency.
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