M471B1G73QH0-YK0 Samsung 8GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory

The M471B1G73QH0-YK0 Samsung 8GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory is a high-performance laptop memory module designed to upgrade your device's capabilities. With a capacity of 8GB, this DDR3 memory module provides ample space for demanding applications and multitasking, ensuring a seamless user experience.

Featuring a speed of 1600MHz and a CAS latency of 11, this memory module delivers fast data transfer rates and quick access to your system's resources. As a non-ECC Unbuffered SODIMM, it provides reliable performance and compatibility with a wide range of laptops. The 204-pin design ensures easy installation, while the low voltage of 1.35V reduces power consumption and heat generation, making it an ideal choice for energy-efficient systems.

The dual-rank configuration of this memory module enables it to handle multiple tasks simultaneously, making it perfect for resource-intensive applications such as video editing, gaming, and software development. With its high-quality Samsung components and rigorous testing, this memory module guarantees exceptional durability and performance, allowing you to push your laptop to its limits without compromising stability. By upgrading with the M471B1G73QH0-YK0 Samsung 8GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SOD