Samsung
M471B1G73BH0-YK0 Samsung 8GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
M471B1G73BH0-YK0 Samsung 8GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
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Upgrade your laptop's performance with the Samsung M471B1G73BH0-YK0 8GB PC3-12800 non-ECC Unbuffered DDR3-1600MHz CL11 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory. This high-quality RAM module is designed to deliver fast and reliable performance, making it an ideal choice for users who require seamless multitasking and efficient data processing.
With a memory speed of 1600MHz and a CAS latency of 11, this 8GB DDR3 RAM module ensures smooth operation and quick loading times, allowing you to work efficiently without interruptions. The dual-rank memory configuration enables two ranks of memory to be accessed simultaneously, enhancing overall system performance. Additionally, the low voltage of 1.35V reduces power consumption, making it an eco-friendly option for your laptop.
The M471B1G73BH0-YK0 SODIMM is designed with a 204-pin interface, ensuring compatibility with a wide range of laptops. As a non-ECC and unbuffered memory module, it provides reliable performance and easy installation, making it a great option for users looking to upgrade their laptop's memory without compromising on quality or performance. With Samsung's reputation for producing high-quality memory modules, you can trust the M471B1G73BH0-YK0 to deliver exceptional performance and durability.
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