Samsung
M471B1G73BH0-YH9 Samsung 8GB PC3-10600 non-ECC Unbuffered DDR3-1333MHz CL9 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
M471B1G73BH0-YH9 Samsung 8GB PC3-10600 non-ECC Unbuffered DDR3-1333MHz CL9 204-Pin SODIMM 1.35V Low Voltage Dual Rank Memory
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Upgrade your laptop's performance with the Samsung M471B1G73BH0-YH9 8GB PC3-10600 non-ECC Unbuffered DDR3-1333MHz memory module. This 204-pin SODIMM is designed to provide a significant boost to your laptop's speed and responsiveness, making it ideal for multitasking, running memory-intensive applications, and enhancing overall system performance.
With a speed of DDR3-1333MHz and a CAS latency of CL9, this memory module ensures fast data transfer rates and efficient memory access. The non-ECC Unbuffered design provides reliable performance and compatibility, while the low voltage of 1.35V helps to reduce power consumption and prolong battery life. As a dual-rank memory module, it offers improved performance and increased memory bandwidth, making it suitable for demanding applications.
The Samsung M471B1G73BH0-YH9 8GB PC3-10600 memory module is a high-quality, reliable solution for laptop users who need to upgrade their system's memory. Its compact 204-pin SODIMM form factor ensures easy installation and compatibility with a wide range of laptops. By upgrading to this high-performance memory module, you can experience faster performance, improved multitasking, and enhanced overall system reliability.
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