Samsung
M393B1G73QH0-YK008 Samsung 8GB PC3-12800 ECC Registered DDR3-1600MHz CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory
M393B1G73QH0-YK008 Samsung 8GB PC3-12800 ECC Registered DDR3-1600MHz CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory
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The M393B1G73QH0-YK008 Samsung 8GB PC3-12800 ECC Registered DDR3-1600MHz CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory is a high-performance, enterprise-grade memory solution designed to meet the demands of data-intensive applications. With its 8GB capacity, this DDR3-1600MHz memory module is ideal for servers and workstations that require a significant amount of memory to run multiple applications simultaneously.
This Samsung memory module features a low voltage of 1.35V, making it an energy-efficient option for data centers and other high-density computing environments. The ECC (Error-Correcting Code) registered design ensures that data integrity is maintained, even in the presence of single-bit errors, providing a high level of reliability and data security. The dual rank configuration allows for increased memory bandwidth and improved system performance.
The PC3-12800 specification indicates that this memory module is capable of transferring data at speeds of up to 12800 MB/s, making it well-suited for applications that require high-speed data transfer, such as video editing, 3D modeling, and scientific simulations. The CL11 latency rating ensures that data is accessed quickly and efficiently, minimizing system bottlenecks and improving overall performance.
With its high-quality construction and reliable performance, the M393B1G73QH0-YK008 Samsung 8GB PC3-12800 ECC Registered DDR3-1600MHz CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory is an excellent choice for businesses and organizations that require a high-performance memory solution for their servers and workstations.
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