Samsung
M386B4G70DM0-YMA Samsung 32GB PC3-14900 ECC Registered DDR3-1866MHz CL13 240-Pin Load Reduced DIMM 1.35V Low Voltage Quad Rank Memory
M386B4G70DM0-YMA Samsung 32GB PC3-14900 ECC Registered DDR3-1866MHz CL13 240-Pin Load Reduced DIMM 1.35V Low Voltage Quad Rank Memory
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The M386B4G70DM0-YMA Samsung 32GB PC3-14900 ECC Registered DDR3-1866MHz CL13 240-Pin Load Reduced DIMM 1.35V Low Voltage Quad Rank Memory is a high-performance, enterprise-grade memory solution designed to meet the demands of data-intensive applications. With a capacity of 32GB, this DDR3-1866MHz memory module is engineered to provide exceptional speed and reliability in mission-critical environments.
This PC3-14900 ECC (Error-Correcting Code) registered memory module features a 240-pin load-reduced design, which helps to minimize signal degradation and ensure stable operation in high-density server configurations. The CL13 latency rating indicates a balance between speed and signal integrity, making this memory module suitable for a wide range of applications, from databases and virtualization to cloud computing and big data analytics.
The 1.35V low-voltage operation of this memory module allows for reduced power consumption and heat generation, making it an attractive option for data centers and other high-density computing environments. The quad rank design enables higher memory bandwidth and improved system performance, making this memory module an ideal choice for applications that require high-speed data transfer and processing.
By selecting the M386B4G70DM0-YMA Samsung 32GB PC3-14900 ECC Registered DDR3-1866MHz CL13 240-Pin Load Reduced DIMM 1.35V Low Voltage Quad Rank Memory, system administrators and IT professionals can ensure reliable, high-performance operation in their enterprise environments, while also reducing the risk of data corruption and system crashes.
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