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M386B4G70DM0-YH9Q Samsung 32GB DDR3-1333MHz PC3-10600 Reg ECC CL9 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory

M386B4G70DM0-YH9Q Samsung 32GB DDR3-1333MHz PC3-10600 Reg ECC CL9 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory

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Regular price $87.08 USD
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The M386B4G70DM0-YH9Q Samsung 32GB DDR3-1333MHz PC3-10600 Reg ECC CL9 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory is a high-performance RAM module designed to enhance the capabilities of your system. With a capacity of 32GB, this memory module provides ample space for running multiple applications simultaneously, making it an ideal choice for demanding tasks. The DDR3-1333MHz speed ensures rapid data transfer, while the PC3-10600 specification guarantees compatibility with a wide range of systems.

This RAM module features Error-Correcting Code (ECC) technology, which detects and corrects data errors in real-time, ensuring the integrity and reliability of your data. The CL9 latency rating indicates that this module can handle high-speed operations with minimal delay. The 240Pin interface and Quad Rank design enable seamless integration with compatible systems, while the Low Voltage 1.35V operation reduces power consumption and heat generation. As a Registered DIMM (RDIMM), this module is designed to provide high-performance and low-power consumption, making it an excellent choice for enterprise-level applications.

The M386B4G70DM0-YH9Q Samsung 32GB DDR3-1333MHz PC3-10600 Reg ECC CL9 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory is engineered to deliver exceptional performance, reliability, and efficiency. Its high-capacity design and advanced features make it an ideal upgrade for systems that require intense memory resources. Whether you're running complex simulations, data analytics, or other demanding workloads, this RAM module is designed to help you achieve optimal results. With its robust construction and Samsung's reputation for quality, this memory module is a trusted choice for professionals and organizations seeking to maximize their system's potential.

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