M386B4G70BM0-YK000 Samsung 32GB DDR3-1600MHz PC3-12800 Reg ECC CL11 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory

The M386B4G70BM0-YK000 Samsung 32GB DDR3-1600MHz PC3-12800 Reg ECC CL11 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory is a high-performance RAM module designed to enhance the capabilities of your system. With a capacity of 32GB, this memory module provides ample space for running multiple applications simultaneously, making it an ideal choice for demanding tasks. The DDR3-1600MHz speed ensures that data is transferred quickly and efficiently, while the PC3-12800 specification guarantees compatibility with a wide range of systems.

This RAM module features Error-Correcting Code (ECC) technology, which detects and corrects data errors in real-time, ensuring the integrity and reliability of your data. The CL11 latency rating indicates that this module can handle high-speed data transfer with minimal delay. The 240Pin interface and LR-RDIMM form factor make it easy to install and integrate into your existing system. Additionally, the 1.35V low voltage requirement reduces power consumption, making it an energy-efficient choice for organizations looking to minimize their environmental footprint.

The Quad Rank design of this memory module allows for increased storage density, enabling you to upgrade your system's memory capacity without sacrificing performance. The M386B4G70BM0-YK000 Samsung 32GB DDR3-1600MHz PC3-12800 Reg ECC CL11 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory is a reliable and high-performance solution for businesses, data centers, and other organizations that require fast, efficient, and dependable memory solutions. With its exceptional specifications and features, this RAM module is designed to meet the demands of modern computing applications, providing a significant boost to your system's overall performance and productivity.