M386B2K70DM0-YK0 Samsung 16GB DDR3-1600MHz PC3-12800 Reg ECC CL11 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory

The M386B2K70DM0-YK0 Samsung 16GB DDR3-1600MHz PC3-12800 Reg ECC CL11 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory is a high-performance RAM module designed to enhance the capabilities of your system. With a capacity of 16GB, this memory module provides ample space for running multiple applications simultaneously, making it an ideal choice for demanding tasks. The DDR3-1600MHz speed ensures that data is transferred quickly and efficiently, reducing lag and improving overall system responsiveness.

This RAM module operates at a low voltage of 1.35V, which helps to reduce power consumption and minimize heat generation. The Reg ECC (Error-Correcting Code) feature ensures that data is handled accurately and reliably, making it suitable for applications where data integrity is crucial. The CL11 latency rating indicates that this module can handle data access requests quickly, further enhancing system performance. The 240Pin LR-RDIMM form factor makes it compatible with a wide range of systems, and the Quad Rank design allows for increased memory density.

The M386B2K70DM0-YK0 Samsung 16GB DDR3-1600MHz PC3-12800 Reg ECC CL11 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory is a reliable and efficient memory solution for systems that require high-capacity and high-speed memory. Its low voltage operation and error-correcting capabilities make it an attractive choice for applications where power efficiency and data accuracy are essential. Whether you're running demanding workloads or simply need to upgrade your system's memory, this RAM module is a solid choice for enhancing performance and reliability.