M386B2G70DM0-YK0 Samsung 16GB DDR3-1600MHz PC3-12800 Reg ECC CL11 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory

The M386B2G70DM0-YK0 Samsung 16GB DDR3-1600MHz PC3-12800 Reg ECC CL11 240Pin LR-RDIMM 1.35V Low Voltage Quad Rank Memory is a high-performance RAM module designed to enhance the capabilities of your system. With a capacity of 16GB, this memory module provides ample space for running multiple applications simultaneously, making it an ideal choice for demanding tasks. The DDR3-1600MHz speed ensures that data is transferred quickly and efficiently, reducing lag and improving overall system responsiveness.

This RAM module operates at a low voltage of 1.35V, which helps to reduce power consumption and minimize heat generation, making it a reliable and energy-efficient choice. The PC3-12800 specification indicates that this module is compatible with systems that support this standard, ensuring seamless integration and optimal performance. The Reg ECC (Registered Error-Correcting Code) feature provides an additional layer of data integrity, detecting and correcting errors in real-time to prevent data corruption and system crashes.

The CL11 latency rating of this RAM module indicates that it can access data quickly, with a latency of 11 clock cycles. The 240Pin interface ensures compatibility with a wide range of systems, while the LR-RDIMM (Load-Reduced Registered Dual In-Line Memory Module) design helps to reduce the load on the system's memory controller, improving overall system stability. As a Quad Rank memory module, it offers increased storage density, allowing for more memory to be installed in a single slot, making it an excellent choice for systems that require high-capacity memory.